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| www.fairchildsemi.com KA5M0965Q Fairchild Power Switch(FPS) Features * * * * * * * * * * Precision fixed operating frequency (70kHz) Low start-up current(typ. 100uA) Pulse by pulse current limiting Over Load protection Over current protection Over voltage protecton (Min. 25V) Internal thermal shutdown function Under voltage lockout Internal high voltage sense FET Latch mode Description The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loopcompensation and fault protection circuitry. compared to discrete MOSFET and PWM controller or RCC solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter. TO-3P-5L 1 1. DRAIN 2. GND 3. VCC 4. FB 5. S/S Internal Block Diagram Vcc 3 + 27V Drain 1 UVLO INTERNAL BIAS Good Logic CLK OVP OVP-out VCC VREF 5uA 15V/9V 1mA Vref VOLTAGE Sense LIMIT CIRCUIT FET OSC Feedback 4 Soft Start 5 + 7.5V 5V O LP 2.5R 14V S + LEB R Q R TSD (TJ=150) OVP-out (VCC=27V) OCL (VS=1.4V) VO F F S E T VS Rsense Q R S Power-on Reset /Auto-restart 2 GND LEB : Leading Edge Blanking OCL : Over Current Limit Shutdown Latch Rev.1.0.2 (c)2001 Fairchild Semiconductor Corporation KA5M0965Q Absolute Maximum Ratings Characteristic Maximum Drain voltage (1) Drain-Gate voltage (RGS=1M) Gate-source (GND) voltage Drain current pulsed (2) Single pulsed avalanche energy (3) Continuous drain current (TC=25C) Continuous drain current (TC=100C) Maximum Supply voltage Input voltage range Total power dissipation Operating ambient temperature Storage temperature Symbol VD,MAX VDGR VGS IDM EAS ID ID VCC,MAX VFB (watt H/S) PD Derating TA TSTG Value 650 650 30 36.0 950 9.0 5.8 30 -0.3 to VSD 170 1.33 -25 to +85 -55 to +150 Unit V V V ADC mJ ADC ADC V V W W/C C C Note: 1. Tj = 25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 20mH, VDD = 50V, RG = 27, starting Tj = 25C 2 KA5M0965Q Electrical Characteristics (SFET part) (Ta = 25C unless otherwise specified) Characteristic Drain-source breakdown voltage Zero gate voltage drain current Static drain-source on resistance (note) Forward transconductance (note) Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate-source charge Gate-drain (Miller) charge Note: 1. Pulse test: Pulse width 300S, duty 2% 2. 1 S = --R Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test condition VGS=0V, ID=50A VDS=Max., Rating, VGS=0V VDS=0.8Max., Rating, VGS=0V, TC=125C VGS=10V, ID=4.5A VDS=50V, ID=4.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5BVDSS, ID=9.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=9.0A, VDS=0.8BVDSS Min. 650 5.0 - Typ. 0.96 1200 135 25 25 75 130 70 45 8 22 Max. 50 200 1.2 60 160 270 150 60 - Unit V A mA W S pF nS nC 3 KA5M0965Q Electrical Charcteristics (Control part) (Continued) (Ta = 25C unless otherwise specified) Characteristic Symbol UVLO SECTION Start threshold voltage VSTART Stop threshold voltage VSTOP OSCILLATOR SECTION Initial accuracy FOSC (2) Frequency change with temperature Maximum duty cycle Dmax FEEDBACK SECTION Feedback source current IFB Shutdown Feedback voltage VSD Shutdown delay current Idelay SOFT START SECTION Soft Start Voltage VSS Soft Start Current ISS CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit IOVER PROTECTION SECTION TSD Thermal shutdown temperature (Tj) (1) Over voltage protection voltage VOVP TOTAL DEVICE SECTION Start Up current ISTART Operating supply current (control part only) IOP Test condition After turn on Ta=25C -25C Ta +85C Ta=25C, 0V Vfb 3V Vfb>6.5V Ta=25C, 5V Vfb VSD VFB =2V Sync & S/S=GND Max. inductor current VCC 24V VCC=14V VCC 28 Min. 14 8.4 61 74 0.7 6.9 4 4.7 0.8 5.28 140 25 Typ. 15 9 67 5 77 0.9 7.5 5 5.0 1.0 6.00 160 27 0.1 7 Max. 16 9.6 73 10 80 1.1 8.1 6 5.3 1.2 6.72 29 0.17 12 Unit V V kHz % % mA V A V mA A C V mA mA Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process 3. These parameters are indicated Inductor current. 4 KA5M0965Q Typical Performance Characteristics Top : 1 ID , Drain Current [A] ID , Drain Current [A] 10 Bottom : VGS 15 V 10 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 10 1 150 25 0 10 0 10 -55 10 -1 Note : 1. 250 s Pulse Test 2. T C = 25 -1 Note 1. VDS = 50V 2. 250 s Pulse Test 10 10 0 10 1 10 -1 2 4 6 8 10 VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 1. Output Characteristics 1.3 Figure 2. Thansfer Characteristics IDR , Reverse Drain Current [A] RDS(on) , [] Drain-Source On-Resistance 1.2 VGS = 10V 1.1 VGS = 20V 1.0 10 1 10 0 0.9 150 25 Note : 1. VGS = 0V 2. 250 s Pulse Test 0.8 0 2 4 6 8 10 12 14 16 10 -1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage 3000 C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 12 VGS, Gate-Source Voltage [V] 2500 10 V DS = 120V V DS = 300V V DS = 480V Capacitances [pF] 2000 Ciss 8 1500 Coss 6 1000 Crss Note ; 1. V GS = 0 V 2. f = 1 MHz 4 500 2 Note : ID = 8.5 A 0 -1 10 10 0 10 1 0 0 5 10 15 20 25 30 35 40 45 V DS , Drain-Source Voltage [V] Q G, Total Gate Charge [nC] Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage 5 KA5M0965Q Typical Performance Characteristics (Continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 Note : 1. V GS = 0 V 2. I D = 250 A 0.5 Note : 1. V G S = 10 V 2. I D = 6.0 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature 10 10 2 Operation in This Area is Limited by R DS(on) 8 ID, Drain Current [A] 100 s 10 1 1 ms 10 ms DC ID, Drain Current [A] 3 10 s 6 4 10 0 Notes : 1. T C = 25 C 2. T J = 150 C 3. Single Pulse o o 2 10 -1 10 0 10 1 10 2 10 0 25 50 75 100 125 150 V DS , Drain-Source Voltage [V] T C, Case Temperature [] Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature ( t) , T h e rm a l R e s p o n s e 10 0 D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 JC 0 .0 1 10 -2 Z s in g le p u ls e N o te s : 1 . Z JC( t) = 0 .7 5 /W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T J M - T C = P D M * Z J C( t ) 0 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 10 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] Figure 11. Thermal Response 6 KA5M0965Q Typical Performance Characteristics (control part) (These characteristic graphs are normalized at Ta = 25C) Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 Fig.2 Feedback Source Current 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 Figure 1. Operating Frequency Figure 2. Feedback Source Current Fig.3 Operating Current 1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 1.1 1.05 Fig.4 Max Inductor Current Iover Ipeak 1 0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 0 25 50 75 100 125 150 Figure 3. Operating Supply Current Figure 4. Peak Current Limit 1.5 1.3 Fig.5 Start up Current 1.15 1.1 1.05 Fig.6 Start Threshold Voltage Istart 1.1 0.9 0.7 0.5 -25 Vstart 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Figure 5. Start up Current Figure 6. Start Threshold Voltage 7 KA5M0965Q Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25C) Fig.7 Stop Threshold Voltage 1.15 1.1 1.05 1.15 1.1 1.05 Fig.8 Maximum Duty Cycle Vstop 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Dmax 1 0.95 0.9 0.85 -25 0 25 50 75 100 125 150 Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle Fig.9 Vcc Zener Voltage 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05 Fig.10 Shutdown Feedback Voltage Vsd 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Figure 9. VCC Zener Voltage Figure 10. Shutdown Feedback Voltage Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 1.15 1.1 1.05 Fig.12 Over Voltage Protection Vovp 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection 8 KA5M0965Q Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25C) Fig.13 Soft Start Voltage 1.15 1.1 1.05 2.5 2 1.5 ( Rdson)1 Fig.14 Drain Source Turn-on Resistance Vss 1 0.9 0.95 0.85 -25 0.5 0 25 50 75 100 125 150 0 -25 0 25 50 75 100 125 150 Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance 9 KA5M0965Q Package Dimensions TO-3P-5L 10 KA5M0965Q Package Dimensions (Continued) TO-3P-5L (Forming) 11 KA5M0965Q Ordering Information Product Number KA5M0965Q-TU KA5M0965Q-YDTU TU : Non Forming Type YDTU : Forming Type Package TO-3P-5L TO-3P-5L(Forming) Rating 650V, 9A Operating Temperature -25C to +85C DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com 1/19/02 0.0m 001 Stock#DSxxxxxxxx 2001 Fairchild Semiconductor Corporation 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. |
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